Modeling and Understanding the Compact Performance of h-BN Dual-Gated ReS2 Transistor

By Prof. Sang Wook Lee
Department of Physics
PURE Research Profile
leesw@ewha.ac.kr

 

Figure. (a) Microscope image of ReS2 based dual gate field effect transistor device. (b) Thickness profile analyzed by atomic force microscope study. (c) Electrical transport measurement results according to top/bottom gate bias voltage.

 

In this work, electrical transport properties of a two-dimensional material based dual gate transistor was studied. ReS2, which is considered a next-generation two-dimensional material, was used as a channel, and h-BN, a high-k material with few defects and traps, was used as a gate dielectric to fabricate a field effect transistor(FET). In particular, the analysis of performance optimization of dual-gated h-BN 2D FETs through various methodologies is introduced by fabricating FETs with a dual-gated structure in which h-BN is simultaneously inserted at the top/bottom side of the ReS2 channel.

By investigating its electrical transport measurement according to top/bottom gate bias voltages, a threshold analytic choice map is obtained, and through this, we understand and infer the formation of a current path in the conduction path of a layered two-dimensional channel. Also, based on the analytic choice map, optimization of device performance indicators for interface trap correlation (subthreshold swing), mobility, and threshold voltage can be analyzed.

In addition, through additional measurements such as time-dependent current signal and low-frequency noise, the “correlation for dual-gated 2D FET performance optimization” of this study using analytic choice map is disproved. Such statistical and time-dependent trap/defect correlation is expected to have a significant influence on the reliability analysis of future two-dimensional material based nano electronic devices.

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Kookjin Lee, Junhee Choi, Ben Kaczer, Alexander Grill, Jaewoo Lee, Jungu Chun, Hyeran Cho, Donghoon Shin, Jaewoo Lee, Min-Kyu Joo, Hyunjin Ji, Sangwook Lee, and Gyu-Tae Kim, “Modeling and Understanding the Compact Performance of h-BN Dual-Gated ReS2 Transistor” Advanced Functional Materials, vol. 31, 23, 2100625, (2021)